The new SoC will be built using Samsung’s 10nm FinFET process and will feature Quick Charge 4
Qualcomm and Samsung have partnered to manufacture the Snapdragon 835 SoC with the 10nm FinFET process. Last month, Samsung had announced that it had started mass producing chipsets using the 10nm FinFET. Qualcomm says that the 10nm process will offer up to 30 percent increase in area efficiency, 27 percent higher performance and 40 percent lower power consumption as compared to processors made using the 14nm FinFET process.
“We are excited to continue working together with Samsung in developing products that lead the mobile industry,” said Keith Kressin, senior vice president, product management, Qualcomm Technologies. Inc. “Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.”
Qualcomm also unveiled the next generation of its fast charging technology. Called Quick Charge 4, this new technology will be used in the Snapdragon 835 processor. The chipset is expected to be available in devices in the first half of 2017.
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